SEMI OpenIR  > 中科院半导体材料科学重点实验室
Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode
Wang, C.; Qu, H. J.; Chen, W. X.; Ran, G. Z.; Yu, H. Y.; Niu, B.; Pan, J. Q.; Wang, W.
2013
Source PublicationAPPLIED PHYSICS LETTERS
Volume102Issue:6Pages:061112
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-09-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24375
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang, C.,Qu, H. J.,Chen, W. X.,et al. Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode[J]. APPLIED PHYSICS LETTERS,2013,102(6):061112.
APA Wang, C..,Qu, H. J..,Chen, W. X..,Ran, G. Z..,Yu, H. Y..,...&Wang, W..(2013).Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode.APPLIED PHYSICS LETTERS,102(6),061112.
MLA Wang, C.,et al."Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode".APPLIED PHYSICS LETTERS 102.6(2013):061112.
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