| In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy | |
| Yu, J. L.; Chen, Y. H.; Bo, X.; Jiang, C. Y.; Ye, X. L.; Wu, S. J.; Gao, H. S. | |
| 2013 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 113Issue:8Pages:083504 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-09-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24367 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Yu, J. L.,Chen, Y. H.,Bo, X.,et al. In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy[J]. JOURNAL OF APPLIED PHYSICS,2013,113(8):083504. |
| APA | Yu, J. L..,Chen, Y. H..,Bo, X..,Jiang, C. Y..,Ye, X. L..,...&Gao, H. S..(2013).In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy.JOURNAL OF APPLIED PHYSICS,113(8),083504. |
| MLA | Yu, J. L.,et al."In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy".JOURNAL OF APPLIED PHYSICS 113.8(2013):083504. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013114.pdf（461KB） | 限制开放 | License | Application Full Text | |||
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