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In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy
Yu, J. L.; Chen, Y. H.; Bo, X.; Jiang, C. Y.; Ye, X. L.; Wu, S. J.; Gao, H. S.
2013
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume113Issue:8Pages:083504
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-09-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24367
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yu, J. L.,Chen, Y. H.,Bo, X.,et al. In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy[J]. JOURNAL OF APPLIED PHYSICS,2013,113(8):083504.
APA Yu, J. L..,Chen, Y. H..,Bo, X..,Jiang, C. Y..,Ye, X. L..,...&Gao, H. S..(2013).In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy.JOURNAL OF APPLIED PHYSICS,113(8),083504.
MLA Yu, J. L.,et al."In-plane optical anisotropy induced by asymmetrically delta-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy".JOURNAL OF APPLIED PHYSICS 113.8(2013):083504.
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