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Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation
Gong, Xiao; Han, Genquan; Bai, Fan; Su, Shaojian; Guo, Pengfei; Yang, Yue; Cheng, Ran; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Pan, Jisheng; Zhang, Zheng; Tok, Eng Soon; Antoniadis, Dimitri; Yeo, Yee-Chia
2013
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume34Issue:3Pages:339-341
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-09-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24357
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Gong, Xiao,Han, Genquan,Bai, Fan,et al. Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation[J]. IEEE ELECTRON DEVICE LETTERS,2013,34(3):339-341.
APA Gong, Xiao.,Han, Genquan.,Bai, Fan.,Su, Shaojian.,Guo, Pengfei.,...&Yeo, Yee-Chia.(2013).Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation.IEEE ELECTRON DEVICE LETTERS,34(3),339-341.
MLA Gong, Xiao,et al."Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation".IEEE ELECTRON DEVICE LETTERS 34.3(2013):339-341.
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