SEMI OpenIR  > 中科院半导体照明研发中心
InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer
Wang, Liancheng; Zhang, Yiyun; Li, Xiao; Liu, Zhiqiang; Zhang, Lian; Guo, Enqing; Yi, Xiaoyan; Wang, Guohong
2013
Source PublicationPROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
Volume469Issue:2151Pages:20120652
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-09-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24345
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wang, Liancheng,Zhang, Yiyun,Li, Xiao,et al. InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer[J]. PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES,2013,469(2151):20120652.
APA Wang, Liancheng.,Zhang, Yiyun.,Li, Xiao.,Liu, Zhiqiang.,Zhang, Lian.,...&Wang, Guohong.(2013).InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer.PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES,469(2151),20120652.
MLA Wang, Liancheng,et al."InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer".PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES 469.2151(2013):20120652.
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