| InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer | |
| Wang, Liancheng; Zhang, Yiyun; Li, Xiao; Liu, Zhiqiang; Zhang, Lian; Guo, Enqing; Yi, Xiaoyan; Wang, Guohong | |
| 2013 | |
| Source Publication | PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
 |
| Volume | 469Issue:2151Pages:20120652 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-09-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24345 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Wang, Liancheng,Zhang, Yiyun,Li, Xiao,et al. InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer[J]. PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES,2013,469(2151):20120652. |
| APA | Wang, Liancheng.,Zhang, Yiyun.,Li, Xiao.,Liu, Zhiqiang.,Zhang, Lian.,...&Wang, Guohong.(2013).InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer.PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES,469(2151),20120652. |
| MLA | Wang, Liancheng,et al."InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer".PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES 469.2151(2013):20120652. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013090.pdf（767KB） | 限制开放 | License | Application Full Text | |||
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