InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer | |
Wang, Liancheng; Zhang, Yiyun; Li, Xiao; Liu, Zhiqiang; Zhang, Lian; Guo, Enqing; Yi, Xiaoyan; Wang, Guohong | |
2013 | |
Source Publication | PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
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Volume | 469Issue:2151Pages:20120652 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-09-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24345 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Wang, Liancheng,Zhang, Yiyun,Li, Xiao,et al. InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer[J]. PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES,2013,469(2151):20120652. |
APA | Wang, Liancheng.,Zhang, Yiyun.,Li, Xiao.,Liu, Zhiqiang.,Zhang, Lian.,...&Wang, Guohong.(2013).InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer.PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES,469(2151),20120652. |
MLA | Wang, Liancheng,et al."InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer".PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES 469.2151(2013):20120652. |
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