Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates | |
Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo | |
2013 | |
Source Publication | APPLIED SURFACE SCIENCE
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Volume | 270Pages:301-306 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-09-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24336 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Dong, Lin,Sun, Guosheng,Yu, Jun,et al. Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates[J]. APPLIED SURFACE SCIENCE,2013,270:301-306. |
APA | Dong, Lin.,Sun, Guosheng.,Yu, Jun.,Zheng, Liu.,Liu, Xingfang.,...&Wang, Zhanguo.(2013).Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates.APPLIED SURFACE SCIENCE,270,301-306. |
MLA | Dong, Lin,et al."Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates".APPLIED SURFACE SCIENCE 270(2013):301-306. |
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2013076.pdf(1164KB) | 限制开放 | License | Application Full Text |
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