| Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates | |
| Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo | |
| 2013 | |
| Source Publication | APPLIED SURFACE SCIENCE
 |
| Volume | 270Pages:301-306 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-09-17 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24336 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Dong, Lin,Sun, Guosheng,Yu, Jun,et al. Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates[J]. APPLIED SURFACE SCIENCE,2013,270:301-306. |
| APA | Dong, Lin.,Sun, Guosheng.,Yu, Jun.,Zheng, Liu.,Liu, Xingfang.,...&Wang, Zhanguo.(2013).Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates.APPLIED SURFACE SCIENCE,270,301-306. |
| MLA | Dong, Lin,et al."Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates".APPLIED SURFACE SCIENCE 270(2013):301-306. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013076.pdf（1164KB） | 限制开放 | License | Application Full Text | |||
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