SEMI OpenIR  > 半导体超晶格国家重点实验室
Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector
Yuan Si-Peng; Shen Chao; Zheng Hou-Zhi; Liu Qi; Wang Li-Guo; Meng Kang-Kang; Zhao Jian-Hua
2013
Source PublicationCHINESE PHYSICS B
Volume22Issue:4Pages:047202
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-09-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24328
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Yuan Si-Peng,Shen Chao,Zheng Hou-Zhi,et al. Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector[J]. CHINESE PHYSICS B,2013,22(4):047202.
APA Yuan Si-Peng.,Shen Chao.,Zheng Hou-Zhi.,Liu Qi.,Wang Li-Guo.,...&Zhao Jian-Hua.(2013).Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector.CHINESE PHYSICS B,22(4),047202.
MLA Yuan Si-Peng,et al."Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector".CHINESE PHYSICS B 22.4(2013):047202.
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