SEMI OpenIR  > 中科院半导体材料科学重点实验室
InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration
Li Xin-Kun; Jin Peng; Liang De-Chun; Wu Ju; Wang Zhan-Guo
2013
Source PublicationCHINESE PHYSICS B
Volume22Issue:4Pages:048102
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-09-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24327
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li Xin-Kun,Jin Peng,Liang De-Chun,et al. InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration[J]. CHINESE PHYSICS B,2013,22(4):048102.
APA Li Xin-Kun,Jin Peng,Liang De-Chun,Wu Ju,&Wang Zhan-Guo.(2013).InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration.CHINESE PHYSICS B,22(4),048102.
MLA Li Xin-Kun,et al."InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration".CHINESE PHYSICS B 22.4(2013):048102.
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