Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors | |
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo | |
2013 | |
Source Publication | CHINESE PHYSICS B
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Volume | 22Issue:4Pages:047102 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-09-17 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24325 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Cao Zhi-Fang,Lin Zhao-Jun,Lu Yuan-Jie,et al. Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors[J]. CHINESE PHYSICS B,2013,22(4):047102. |
APA | Cao Zhi-Fang,Lin Zhao-Jun,Lu Yuan-Jie,Luan Chong-Biao,&Wang Zhan-Guo.(2013).Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors.CHINESE PHYSICS B,22(4),047102. |
MLA | Cao Zhi-Fang,et al."Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors".CHINESE PHYSICS B 22.4(2013):047102. |
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