SEMI OpenIR  > 中科院半导体材料科学重点实验室
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
2013
Source PublicationCHINESE PHYSICS B
Volume22Issue:4Pages:047102
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-09-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24325
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Cao Zhi-Fang,Lin Zhao-Jun,Lu Yuan-Jie,et al. Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors[J]. CHINESE PHYSICS B,2013,22(4):047102.
APA Cao Zhi-Fang,Lin Zhao-Jun,Lu Yuan-Jie,Luan Chong-Biao,&Wang Zhan-Guo.(2013).Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors.CHINESE PHYSICS B,22(4),047102.
MLA Cao Zhi-Fang,et al."Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors".CHINESE PHYSICS B 22.4(2013):047102.
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