Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth | |
Wen, Juanjuan; Liu, Zhi; Li, Leliang; Li, Chong; Xue, Chunlai; Zuo, Yuhua; Li, Chuanbo; Wang, Qiming; Cheng, Buwen | |
2013 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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Volume | 113Issue:14Pages:143107 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-08-27 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24312 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Wen, Juanjuan,Liu, Zhi,Li, Leliang,et al. Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth[J]. JOURNAL OF APPLIED PHYSICS,2013,113(14):143107. |
APA | Wen, Juanjuan.,Liu, Zhi.,Li, Leliang.,Li, Chong.,Xue, Chunlai.,...&Cheng, Buwen.(2013).Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth.JOURNAL OF APPLIED PHYSICS,113(14),143107. |
MLA | Wen, Juanjuan,et al."Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth".JOURNAL OF APPLIED PHYSICS 113.14(2013):143107. |
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