SEMI OpenIR  > 中科院半导体材料科学重点实验室
Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
2013
Source PublicationTHIN SOLID FILMS
Volume534Pages:655-658
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24299
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ji, Dong,Lu, Yanwu,Liu, Bing,et al. Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors[J]. THIN SOLID FILMS,2013,534:655-658.
APA Ji, Dong,Lu, Yanwu,Liu, Bing,Liu, Guipeng,Zhu, Qinsheng,&Wang, Zhanguo.(2013).Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors.THIN SOLID FILMS,534,655-658.
MLA Ji, Dong,et al."Dielectric and barrier thickness fluctuation scattering in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors".THIN SOLID FILMS 534(2013):655-658.
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