SEMI OpenIR  > 中科院半导体材料科学重点实验室
Observation of photo darkening in self assembled InGaAs/GaAs quantum dots
Zhang, Hongyi; Chen, Yonghai; Zhou, Xiaolong; Jia, Yanan; Ye, Xiaoling; Xu, Bo; Wang, Zhanguo
2013
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume113Issue:17Pages:173508
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24289
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, Hongyi,Chen, Yonghai,Zhou, Xiaolong,et al. Observation of photo darkening in self assembled InGaAs/GaAs quantum dots[J]. JOURNAL OF APPLIED PHYSICS,2013,113(17):173508.
APA Zhang, Hongyi.,Chen, Yonghai.,Zhou, Xiaolong.,Jia, Yanan.,Ye, Xiaoling.,...&Wang, Zhanguo.(2013).Observation of photo darkening in self assembled InGaAs/GaAs quantum dots.JOURNAL OF APPLIED PHYSICS,113(17),173508.
MLA Zhang, Hongyi,et al."Observation of photo darkening in self assembled InGaAs/GaAs quantum dots".JOURNAL OF APPLIED PHYSICS 113.17(2013):173508.
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