SEMI OpenIR  > 半导体超晶格国家重点实验室
GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Ni, Haiqiao; Shi, Yunbo; Xue, Chenyang; Niu, Zhichuan; Zhang, Wendong; Li, Mifeng; Yu, Ying
2013
Source PublicationNANOSCALE RESEARCH LETTERS
Volume8Pages:218
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24285
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Li, Jie,Guo, Hao,Liu, Jun,et al. GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications[J]. NANOSCALE RESEARCH LETTERS,2013,8:218.
APA Li, Jie.,Guo, Hao.,Liu, Jun.,Tang, Jun.,Ni, Haiqiao.,...&Yu, Ying.(2013).GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.NANOSCALE RESEARCH LETTERS,8,218.
MLA Li, Jie,et al."GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications".NANOSCALE RESEARCH LETTERS 8(2013):218.
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