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540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier
Cui, Kai; Ma, Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong
2013
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume34Issue:6Pages:759-761
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24282
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Cui, Kai,Ma, Wenquan,Zhang, Yanhua,et al. 540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier[J]. IEEE ELECTRON DEVICE LETTERS,2013,34(6):759-761.
APA Cui, Kai.,Ma, Wenquan.,Zhang, Yanhua.,Huang, Jianliang.,Wei, Yang.,...&Li, Qiong.(2013).540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier.IEEE ELECTRON DEVICE LETTERS,34(6),759-761.
MLA Cui, Kai,et al."540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier".IEEE ELECTRON DEVICE LETTERS 34.6(2013):759-761.
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