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Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well
Li, Hongjian; Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Li, Jinmin; Wang, Guohong
2013
Source PublicationAPPLIED PHYSICS EXPRESS
Volume6Issue:5Pages:052102
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24277
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Li, Hongjian,Li, Panpan,Kang, Junjie,et al. Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well[J]. APPLIED PHYSICS EXPRESS,2013,6(5):052102.
APA Li, Hongjian.,Li, Panpan.,Kang, Junjie.,Li, Zhi.,Zhang, Yiyun.,...&Wang, Guohong.(2013).Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well.APPLIED PHYSICS EXPRESS,6(5),052102.
MLA Li, Hongjian,et al."Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well".APPLIED PHYSICS EXPRESS 6.5(2013):052102.
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