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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy
Zhou, Kun; Liu, Jianping; Zhang, Shuming; Li, Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui
2013
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume371Pages:7-10
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24276
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Zhou, Kun,Liu, Jianping,Zhang, Shuming,et al. Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2013,371:7-10.
APA Zhou, Kun.,Liu, Jianping.,Zhang, Shuming.,Li, Zengcheng.,Feng, Meixin.,...&Yang, Hui.(2013).Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy.JOURNAL OF CRYSTAL GROWTH,371,7-10.
MLA Zhou, Kun,et al."Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy".JOURNAL OF CRYSTAL GROWTH 371(2013):7-10.
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