Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier | |
Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang | |
2013 | |
Source Publication | APPLIED PHYSICS EXPRESS
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Volume | 6Issue:5Pages:051201 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-08-27 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24274 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Kong, Xin,Wei, Ke,Liu, Guoguo,et al. Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier[J]. APPLIED PHYSICS EXPRESS,2013,6(5):051201. |
APA | Kong, Xin,Wei, Ke,Liu, Guoguo,Liu, Xinyu,Wang, Cuimei,&Wang, Xiaoliang.(2013).Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier.APPLIED PHYSICS EXPRESS,6(5),051201. |
MLA | Kong, Xin,et al."Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier".APPLIED PHYSICS EXPRESS 6.5(2013):051201. |
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2013024.pdf(740KB) | 限制开放 | License | Application Full Text |
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