| Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier | |
| Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang | |
| 2013 | |
| Source Publication | APPLIED PHYSICS EXPRESS
 |
| Volume | 6Issue:5Pages:051201 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-08-27 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24274 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Kong, Xin,Wei, Ke,Liu, Guoguo,et al. Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier[J]. APPLIED PHYSICS EXPRESS,2013,6(5):051201. |
| APA | Kong, Xin,Wei, Ke,Liu, Guoguo,Liu, Xinyu,Wang, Cuimei,&Wang, Xiaoliang.(2013).Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier.APPLIED PHYSICS EXPRESS,6(5),051201. |
| MLA | Kong, Xin,et al."Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier".APPLIED PHYSICS EXPRESS 6.5(2013):051201. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013024.pdf（740KB） | 限制开放 | License | Application Full Text | |||
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