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Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS
Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia
2013
Source PublicationIEEE TRANSACTIONS ON ELECTRON DEVICES
Volume60Issue:5Pages:1640-1648
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24271
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Gong, Xiao,Han, Genquan,Liu, Bin,et al. Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2013,60(5):1640-1648.
APA Gong, Xiao.,Han, Genquan.,Liu, Bin.,Wang, Lanxiang.,Wang, Wei.,...&Yeo, Yee-Chia.(2013).Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS.IEEE TRANSACTIONS ON ELECTRON DEVICES,60(5),1640-1648.
MLA Gong, Xiao,et al."Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS".IEEE TRANSACTIONS ON ELECTRON DEVICES 60.5(2013):1640-1648.
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