| Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS | |
| Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia | |
| 2013 | |
| Source Publication | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| Volume | 60Issue:5Pages:1640-1648 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-08-27 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24271 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Gong, Xiao,Han, Genquan,Liu, Bin,et al. Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2013,60(5):1640-1648. |
| APA | Gong, Xiao.,Han, Genquan.,Liu, Bin.,Wang, Lanxiang.,Wang, Wei.,...&Yeo, Yee-Chia.(2013).Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS.IEEE TRANSACTIONS ON ELECTRON DEVICES,60(5),1640-1648. |
| MLA | Gong, Xiao,et al."Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS".IEEE TRANSACTIONS ON ELECTRON DEVICES 60.5(2013):1640-1648. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013023.pdf（1997KB） | 限制开放 | License | Application Full Text | |||
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