Numerical study of radial temperature distribution in the AlN sublimation growth system | |
Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan | |
2013 | |
Source Publication | CRYSTAL RESEARCH AND TECHNOLOGY
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Volume | 48Issue:5Pages:321-327 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-08-27 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24270 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Li, Huijie,Liu, Xianglin,Feng, Yuxia,et al. Numerical study of radial temperature distribution in the AlN sublimation growth system[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2013,48(5):321-327. |
APA | Li, Huijie,Liu, Xianglin,Feng, Yuxia,Wei, Hongyuan,&Yang, Shaoyan.(2013).Numerical study of radial temperature distribution in the AlN sublimation growth system.CRYSTAL RESEARCH AND TECHNOLOGY,48(5),321-327. |
MLA | Li, Huijie,et al."Numerical study of radial temperature distribution in the AlN sublimation growth system".CRYSTAL RESEARCH AND TECHNOLOGY 48.5(2013):321-327. |
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