SEMI OpenIR  > 中科院半导体材料科学重点实验室
Numerical study of radial temperature distribution in the AlN sublimation growth system
Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan
2013
Source PublicationCRYSTAL RESEARCH AND TECHNOLOGY
Volume48Issue:5Pages:321-327
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24270
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, Huijie,Liu, Xianglin,Feng, Yuxia,et al. Numerical study of radial temperature distribution in the AlN sublimation growth system[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2013,48(5):321-327.
APA Li, Huijie,Liu, Xianglin,Feng, Yuxia,Wei, Hongyuan,&Yang, Shaoyan.(2013).Numerical study of radial temperature distribution in the AlN sublimation growth system.CRYSTAL RESEARCH AND TECHNOLOGY,48(5),321-327.
MLA Li, Huijie,et al."Numerical study of radial temperature distribution in the AlN sublimation growth system".CRYSTAL RESEARCH AND TECHNOLOGY 48.5(2013):321-327.
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