| Numerical study of radial temperature distribution in the AlN sublimation growth system | |
| Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan | |
| 2013 | |
| Source Publication | CRYSTAL RESEARCH AND TECHNOLOGY
 |
| Volume | 48Issue:5Pages:321-327 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-08-27 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24270 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Li, Huijie,Liu, Xianglin,Feng, Yuxia,et al. Numerical study of radial temperature distribution in the AlN sublimation growth system[J]. CRYSTAL RESEARCH AND TECHNOLOGY,2013,48(5):321-327. |
| APA | Li, Huijie,Liu, Xianglin,Feng, Yuxia,Wei, Hongyuan,&Yang, Shaoyan.(2013).Numerical study of radial temperature distribution in the AlN sublimation growth system.CRYSTAL RESEARCH AND TECHNOLOGY,48(5),321-327. |
| MLA | Li, Huijie,et al."Numerical study of radial temperature distribution in the AlN sublimation growth system".CRYSTAL RESEARCH AND TECHNOLOGY 48.5(2013):321-327. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013022.pdf（274KB） | 限制开放 | License | Application Full Text | |||
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