| Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping | |
| Yang, Xiaoguang; Wang, Kefan; Gu, Yongxian; Ni, Haiqiao; Wang, Xiaodong; Yang, Tao; Wang, Zhanguo | |
| 2013 | |
| Source Publication | SOLAR ENERGY MATERIALS AND SOLAR CELLS
 |
| Volume | 113Pages:144-147 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-08-27 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24267 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Yang, Xiaoguang,Wang, Kefan,Gu, Yongxian,et al. Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2013,113:144-147. |
| APA | Yang, Xiaoguang.,Wang, Kefan.,Gu, Yongxian.,Ni, Haiqiao.,Wang, Xiaodong.,...&Wang, Zhanguo.(2013).Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping.SOLAR ENERGY MATERIALS AND SOLAR CELLS,113,144-147. |
| MLA | Yang, Xiaoguang,et al."Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping".SOLAR ENERGY MATERIALS AND SOLAR CELLS 113(2013):144-147. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013009.pdf（379KB） | 限制开放 | License | Application Full Text | |||
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