SEMI OpenIR  > 中科院半导体材料科学重点实验室
Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
Yang, Xiaoguang; Wang, Kefan; Gu, Yongxian; Ni, Haiqiao; Wang, Xiaodong; Yang, Tao; Wang, Zhanguo
2013
Source PublicationSOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume113Pages:144-147
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24267
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yang, Xiaoguang,Wang, Kefan,Gu, Yongxian,et al. Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2013,113:144-147.
APA Yang, Xiaoguang.,Wang, Kefan.,Gu, Yongxian.,Ni, Haiqiao.,Wang, Xiaodong.,...&Wang, Zhanguo.(2013).Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping.SOLAR ENERGY MATERIALS AND SOLAR CELLS,113,144-147.
MLA Yang, Xiaoguang,et al."Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping".SOLAR ENERGY MATERIALS AND SOLAR CELLS 113(2013):144-147.
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