SEMI OpenIR  > 中科院半导体材料科学重点实验室
A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance
Yu, Guohao; Cai, Yong; Wang, Yue; Dong, Zhihua; Zeng, Chunhong; Zhao, Desheng; Qin, Hua; Zhang, Baoshun
2013
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume34Issue:6Pages:747-749
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24262
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yu, Guohao,Cai, Yong,Wang, Yue,et al. A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance[J]. IEEE ELECTRON DEVICE LETTERS,2013,34(6):747-749.
APA Yu, Guohao.,Cai, Yong.,Wang, Yue.,Dong, Zhihua.,Zeng, Chunhong.,...&Zhang, Baoshun.(2013).A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance.IEEE ELECTRON DEVICE LETTERS,34(6),747-749.
MLA Yu, Guohao,et al."A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance".IEEE ELECTRON DEVICE LETTERS 34.6(2013):747-749.
Files in This Item:
File Name/Size DocType Version Access License
2013004.pdf(425KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Yu, Guohao]'s Articles
[Cai, Yong]'s Articles
[Wang, Yue]'s Articles
Baidu academic
Similar articles in Baidu academic
[Yu, Guohao]'s Articles
[Cai, Yong]'s Articles
[Wang, Yue]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Yu, Guohao]'s Articles
[Cai, Yong]'s Articles
[Wang, Yue]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.