| A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance | |
| Yu, Guohao; Cai, Yong; Wang, Yue; Dong, Zhihua; Zeng, Chunhong; Zhao, Desheng; Qin, Hua; Zhang, Baoshun | |
| 2013 | |
| Source Publication | IEEE ELECTRON DEVICE LETTERS
 |
| Volume | 34Issue:6Pages:747-749 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-08-27 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24262 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Yu, Guohao,Cai, Yong,Wang, Yue,et al. A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance[J]. IEEE ELECTRON DEVICE LETTERS,2013,34(6):747-749. |
| APA | Yu, Guohao.,Cai, Yong.,Wang, Yue.,Dong, Zhihua.,Zeng, Chunhong.,...&Zhang, Baoshun.(2013).A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance.IEEE ELECTRON DEVICE LETTERS,34(6),747-749. |
| MLA | Yu, Guohao,et al."A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance".IEEE ELECTRON DEVICE LETTERS 34.6(2013):747-749. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2013004.pdf（425KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment