A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance | |
Yu, Guohao; Cai, Yong; Wang, Yue; Dong, Zhihua; Zeng, Chunhong; Zhao, Desheng; Qin, Hua; Zhang, Baoshun | |
2013 | |
Source Publication | IEEE ELECTRON DEVICE LETTERS
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Volume | 34Issue:6Pages:747-749 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-08-27 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24262 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Yu, Guohao,Cai, Yong,Wang, Yue,et al. A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance[J]. IEEE ELECTRON DEVICE LETTERS,2013,34(6):747-749. |
APA | Yu, Guohao.,Cai, Yong.,Wang, Yue.,Dong, Zhihua.,Zeng, Chunhong.,...&Zhang, Baoshun.(2013).A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance.IEEE ELECTRON DEVICE LETTERS,34(6),747-749. |
MLA | Yu, Guohao,et al."A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance".IEEE ELECTRON DEVICE LETTERS 34.6(2013):747-749. |
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