Knowledge Management System Of Institute of Semiconductors,CAS
Stable p- and n-type doping of few-layer graphene/graphite | |
Meng, Xiuqing; Tongay, Sefaattin; Kang, Jun; Chen, Zhanghui; Wu, Fengmin; Li, Shu-Shen; Xia, Jian-Bai; Li, Jingbo; Wu, Junqiao | |
2013 | |
Source Publication | CARBON
![]() |
Volume | 57Pages:507-514 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-08-27 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24261 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Meng, Xiuqing,Tongay, Sefaattin,Kang, Jun,et al. Stable p- and n-type doping of few-layer graphene/graphite[J]. CARBON,2013,57:507-514. |
APA | Meng, Xiuqing.,Tongay, Sefaattin.,Kang, Jun.,Chen, Zhanghui.,Wu, Fengmin.,...&Wu, Junqiao.(2013).Stable p- and n-type doping of few-layer graphene/graphite.CARBON,57,507-514. |
MLA | Meng, Xiuqing,et al."Stable p- and n-type doping of few-layer graphene/graphite".CARBON 57(2013):507-514. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
2013003.pdf(1318KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment