SEMI OpenIR  > 中科院半导体材料科学重点实验室
新结构 GaN 基 HEMT 材料及器件研究
丁杰钦
Subtype博士
Thesis Advisor王晓亮
2013
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline微电子学与固体电子学
Subject Area半导体材料
Language中文
Date Available2013-06-20
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24168
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
丁杰钦. 新结构 GaN 基 HEMT 材料及器件研究[D]. 北京. 中国科学院研究生院,2013.
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