SEMI OpenIR  > 中科院半导体材料科学重点实验室
低温缓冲层对MBE生长ZnTe材料性能的改善
张家奇,赵杰,刘超,崔利杰,曾一平
2012
Source Publication半导体技术
Volume37Issue:1Pages:37-41
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2013-06-03
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24152
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
张家奇,赵杰,刘超,崔利杰,曾一平. 低温缓冲层对MBE生长ZnTe材料性能的改善[J]. 半导体技术,2012,37(1):37-41.
APA 张家奇,赵杰,刘超,崔利杰,曾一平.(2012).低温缓冲层对MBE生长ZnTe材料性能的改善.半导体技术,37(1),37-41.
MLA 张家奇,赵杰,刘超,崔利杰,曾一平."低温缓冲层对MBE生长ZnTe材料性能的改善".半导体技术 37.1(2012):37-41.
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