SEMI OpenIR  > 半导体超晶格国家重点实验室
双层堆垛长波长InAs/GaAs量子点发光性质研究
魏全香,吴兵朋,任正伟,贺振宏,牛智川
2012
Source Publication光学学报
Volume32Issue:1Pages:0125001-1-0125001-6
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2013-06-03
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24151
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
魏全香,吴兵朋,任正伟,贺振宏,牛智川. 双层堆垛长波长InAs/GaAs量子点发光性质研究[J]. 光学学报,2012,32(1):0125001-1-0125001-6.
APA 魏全香,吴兵朋,任正伟,贺振宏,牛智川.(2012).双层堆垛长波长InAs/GaAs量子点发光性质研究.光学学报,32(1),0125001-1-0125001-6.
MLA 魏全香,吴兵朋,任正伟,贺振宏,牛智川."双层堆垛长波长InAs/GaAs量子点发光性质研究".光学学报 32.1(2012):0125001-1-0125001-6.
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