Ge-on-Si for Si-based integrated materials and photonic devices | |
Hu Weixuan,Cheng Buwen,Xue Chunlai,Su Shaojian,Xue Haiyun,Zuo Yuhua,Wang Qiming | |
2012 | |
Source Publication | Frontiers of Optoelectronics
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Volume | 5Issue:1Pages:41-50 |
Subject Area | 光电子学 |
Indexed By | CSCD |
Language | 英语 |
Date Available | 2013-06-03 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24148 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Hu Weixuan,Cheng Buwen,Xue Chunlai,Su Shaojian,Xue Haiyun,Zuo Yuhua,Wang Qiming. Ge-on-Si for Si-based integrated materials and photonic devices[J]. Frontiers of Optoelectronics,2012,5(1):41-50. |
APA | Hu Weixuan,Cheng Buwen,Xue Chunlai,Su Shaojian,Xue Haiyun,Zuo Yuhua,Wang Qiming.(2012).Ge-on-Si for Si-based integrated materials and photonic devices.Frontiers of Optoelectronics,5(1),41-50. |
MLA | Hu Weixuan,Cheng Buwen,Xue Chunlai,Su Shaojian,Xue Haiyun,Zuo Yuhua,Wang Qiming."Ge-on-Si for Si-based integrated materials and photonic devices".Frontiers of Optoelectronics 5.1(2012):41-50. |
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