SEMI OpenIR  > 中科院半导体材料科学重点实验室
InP基1×4多模干涉耦合器的设计与制作
马丽,朱洪亮,陈明华,张灿,王宝军,边静
2012
Source Publication光子学报
Volume41Issue:3Pages:299-302
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2013-06-03
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24141
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
马丽,朱洪亮,陈明华,张灿,王宝军,边静. InP基1×4多模干涉耦合器的设计与制作[J]. 光子学报,2012,41(3):299-302.
APA 马丽,朱洪亮,陈明华,张灿,王宝军,边静.(2012).InP基1×4多模干涉耦合器的设计与制作.光子学报,41(3),299-302.
MLA 马丽,朱洪亮,陈明华,张灿,王宝军,边静."InP基1×4多模干涉耦合器的设计与制作".光子学报 41.3(2012):299-302.
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