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射频磁控溅射纳米二氧化钒薄膜的电致相变特性
梁继然,胡明,阚强,后顺保,梁秀琴,陈弘达
2012
Source Publication纳米技术与精密工程
Volume10Issue:2Pages:160-164
Subject Area光电子学
Indexed ByCSCD
Language中文
Date Available2013-06-03
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24139
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
梁继然,胡明,阚强,后顺保,梁秀琴,陈弘达. 射频磁控溅射纳米二氧化钒薄膜的电致相变特性[J]. 纳米技术与精密工程,2012,10(2):160-164.
APA 梁继然,胡明,阚强,后顺保,梁秀琴,陈弘达.(2012).射频磁控溅射纳米二氧化钒薄膜的电致相变特性.纳米技术与精密工程,10(2),160-164.
MLA 梁继然,胡明,阚强,后顺保,梁秀琴,陈弘达."射频磁控溅射纳米二氧化钒薄膜的电致相变特性".纳米技术与精密工程 10.2(2012):160-164.
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