SEMI OpenIR  > 半导体超晶格国家重点实验室
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
Li MF(李密锋)
2013
Source PublicationNanoscale Research Letters
Volume8Issue:1Pages:86
KeywordInas Quantum Dots Sacrificed Inas Layer Molecular Beam Epitaxy Reflection High-energy Electron
Subject Area半导体材料
Date Available2013-06-03
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24136
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Li MF. In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots[J]. Nanoscale Research Letters,2013,8(1):86.
APA Li MF.(2013).In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.Nanoscale Research Letters,8(1),86.
MLA Li MF."In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots".Nanoscale Research Letters 8.1(2013):86.
Files in This Item:
File Name/Size DocType Version Access License
final vision 1556-27(1509KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Li MF(李密锋)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Li MF(李密锋)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Li MF(李密锋)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.