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Si基外延Ge薄膜中残余应变的检测与分析
周志文,李成,余金中
2012
Source Publication光电子·激光
Volume23Issue:9Pages:1749-1753
Subject Area光电子学
Indexed ByCSCD
Language中文
Date Available2013-05-29
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24115
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
周志文,李成,余金中. Si基外延Ge薄膜中残余应变的检测与分析[J]. 光电子·激光,2012,23(9):1749-1753.
APA 周志文,李成,余金中.(2012).Si基外延Ge薄膜中残余应变的检测与分析.光电子·激光,23(9),1749-1753.
MLA 周志文,李成,余金中."Si基外延Ge薄膜中残余应变的检测与分析".光电子·激光 23.9(2012):1749-1753.
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