SEMI OpenIR  > 中科院半导体材料科学重点实验室
有效折射率微扰法研究单缺陷光子晶体平板微腔的性质
周文飞,叶小玲,徐波,张世著,王占国
2012
Source Publication物理学报
Volume61Issue:5Pages:054202-1-054202-8
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2013-05-29
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24113
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
周文飞,叶小玲,徐波,张世著,王占国. 有效折射率微扰法研究单缺陷光子晶体平板微腔的性质[J]. 物理学报,2012,61(5):054202-1-054202-8.
APA 周文飞,叶小玲,徐波,张世著,王占国.(2012).有效折射率微扰法研究单缺陷光子晶体平板微腔的性质.物理学报,61(5),054202-1-054202-8.
MLA 周文飞,叶小玲,徐波,张世著,王占国."有效折射率微扰法研究单缺陷光子晶体平板微腔的性质".物理学报 61.5(2012):054202-1-054202-8.
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