SEMI OpenIR  > 半导体超晶格国家重点实验室
掺Te的GaSb薄膜分子束外延生长及缺陷特性
陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川
2012
Source Publication红外与毫米波学报
Volume31Issue:4Pages:298-301
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2013-05-29
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Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24104
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川. 掺Te的GaSb薄膜分子束外延生长及缺陷特性[J]. 红外与毫米波学报,2012,31(4):298-301.
APA 陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川.(2012).掺Te的GaSb薄膜分子束外延生长及缺陷特性.红外与毫米波学报,31(4),298-301.
MLA 陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川."掺Te的GaSb薄膜分子束外延生长及缺陷特性".红外与毫米波学报 31.4(2012):298-301.
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