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掺Te的GaSb薄膜分子束外延生长及缺陷特性 | |
陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川 | |
2012 | |
Source Publication | 红外与毫米波学报
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Volume | 31Issue:4Pages:298-301 |
Subject Area | 半导体物理 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2013-05-29 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24104 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | 陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川. 掺Te的GaSb薄膜分子束外延生长及缺陷特性[J]. 红外与毫米波学报,2012,31(4):298-301. |
APA | 陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川.(2012).掺Te的GaSb薄膜分子束外延生长及缺陷特性.红外与毫米波学报,31(4),298-301. |
MLA | 陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川."掺Te的GaSb薄膜分子束外延生长及缺陷特性".红外与毫米波学报 31.4(2012):298-301. |
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2012036.pdf(402KB) | 限制开放 | License | Application Full Text |
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