掺Te的GaSb薄膜分子束外延生长及缺陷特性

	掺Te的GaSb薄膜分子束外延生长及缺陷特性
	陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川
	2012
Source Publication	红外与毫米波学报
Volume	31 Issue:4 Pages:298-301
Subject Area	半导体物理
Indexed By	CSCD
Language	中文
Date Available	2013-05-29
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/24104
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川. 掺Te的GaSb薄膜分子束外延生长及缺陷特性[J]. 红外与毫米波学报,2012,31(4):298-301.
APA	陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川.(2012).掺Te的GaSb薄膜分子束外延生长及缺陷特性.红外与毫米波学报,31(4),298-301.
MLA	陈燕,邓爱红,汤宝,王国伟,徐应强,牛智川."掺Te的GaSb薄膜分子束外延生长及缺陷特性".红外与毫米波学报 31.4(2012):298-301.

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