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p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响
王晓勇,种明,赵德刚,苏艳梅
2012
Source Publication物理学报
Volume61Issue:21Pages:217302-1-217302-6
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2013-05-29
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24103
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
王晓勇,种明,赵德刚,苏艳梅. p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响[J]. 物理学报,2012,61(21):217302-1-217302-6.
APA 王晓勇,种明,赵德刚,苏艳梅.(2012).p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响.物理学报,61(21),217302-1-217302-6.
MLA 王晓勇,种明,赵德刚,苏艳梅."p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响".物理学报 61.21(2012):217302-1-217302-6.
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