| p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响 | |
| 王晓勇,种明,赵德刚,苏艳梅 | |
| 2012 | |
| Source Publication | 物理学报
 |
| Volume | 61Issue:21Pages:217302-1-217302-6 |
| Subject Area | 半导体材料 |
| Indexed By | CSCD |
| Language | 中文 |
| Date Available | 2013-05-29 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24103 |
| Collection | 纳米光电子实验室 |
| Recommended Citation GB/T 7714 | 王晓勇,种明,赵德刚,苏艳梅. p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响[J]. 物理学报,2012,61(21):217302-1-217302-6. |
| APA | 王晓勇,种明,赵德刚,苏艳梅.(2012).p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响.物理学报,61(21),217302-1-217302-6. |
| MLA | 王晓勇,种明,赵德刚,苏艳梅."p-GaN/p-Al_xGa_(1-x)N异质结界面处二维空穴气的性质及其对欧姆接触的影响".物理学报 61.21(2012):217302-1-217302-6. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012014.pdf（391KB） | 限制开放 | License | Application Full Text | |||
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