SEMI OpenIR  > 中科院半导体材料科学重点实验室
应变补偿和生长停顿对InAs/InAlGaAs/InP纳米结构形貌的影响
杨新荣,徐波,赵国晴,周晓静,王占国
2012
Source Publication中国科学. 物理学, 力学, 天文学
Volume42Issue:3Pages:237-241
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2013-05-29
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24092
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
杨新荣,徐波,赵国晴,周晓静,王占国. 应变补偿和生长停顿对InAs/InAlGaAs/InP纳米结构形貌的影响[J]. 中国科学. 物理学, 力学, 天文学,2012,42(3):237-241.
APA 杨新荣,徐波,赵国晴,周晓静,王占国.(2012).应变补偿和生长停顿对InAs/InAlGaAs/InP纳米结构形貌的影响.中国科学. 物理学, 力学, 天文学,42(3),237-241.
MLA 杨新荣,徐波,赵国晴,周晓静,王占国."应变补偿和生长停顿对InAs/InAlGaAs/InP纳米结构形貌的影响".中国科学. 物理学, 力学, 天文学 42.3(2012):237-241.
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