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Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance
Yu, J.L; Chen, Y.H; Jiang, C.Y; Zhang, H.Y
2012
Source PublicationJournal of Physics: Conference Series
Volume400Issue:PART 1Pages:012088
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24058
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Yu, J.L,Chen, Y.H,Jiang, C.Y,et al. Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance[J]. Journal of Physics: Conference Series,2012,400(PART 1):012088.
APA Yu, J.L,Chen, Y.H,Jiang, C.Y,&Zhang, H.Y.(2012).Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance.Journal of Physics: Conference Series,400(PART 1),012088.
MLA Yu, J.L,et al."Investigation of cavity mode and excitonic transition in an InGaAs/GaAs/AlGaAs vertical-cavity surface emitting laser structure by variable-temperature micro-photoluminescence, reflectance and photomodulated reflectance".Journal of Physics: Conference Series 400.PART 1(2012):012088.
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