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Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors
Ji, Dong; Liu, Bing; Lu, Yanwu; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
2012
Source PublicationApplied Physics Letters
Volume100Issue:13Pages:132105
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-13
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24052
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ji, Dong,Liu, Bing,Lu, Yanwu,et al. Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors[J]. Applied Physics Letters,2012,100(13):132105.
APA Ji, Dong,Liu, Bing,Lu, Yanwu,Liu, Guipeng,Zhu, Qinsheng,&Wang, Zhanguo.(2012).Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors.Applied Physics Letters,100(13),132105.
MLA Ji, Dong,et al."Polarization-induced remote interfacial charge scattering in Al 2O3/AlGaN/GaN double heterojunction high electron mobility transistors".Applied Physics Letters 100.13(2012):132105.
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