SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities
Peng, Y.S; Xu, B; Ye, X.L; Jin, P; Wang, Z.G
2012
Source PublicationMicroelectronic Engineering
Volume93Pages:1-4
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24036
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Peng, Y.S,Xu, B,Ye, X.L,et al. Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities[J]. Microelectronic Engineering,2012,93:1-4.
APA Peng, Y.S,Xu, B,Ye, X.L,Jin, P,&Wang, Z.G.(2012).Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities.Microelectronic Engineering,93,1-4.
MLA Peng, Y.S,et al."Effect of rapid thermal annealing on the luminescence of self-assembled InAs quantum dots embedded in GaAs-based photonic crystal nanocavities".Microelectronic Engineering 93(2012):1-4.
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