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Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming
2012
Source PublicationNanoscale Research Letters
Volume7Pages:1-11
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24033
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Liu, Zhi,Cheng, Buwen,Hu, Weixuan,et al. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature[J]. Nanoscale Research Letters,2012,7:1-11.
APA Liu, Zhi,Cheng, Buwen,Hu, Weixuan,Su, Shaojian,Li, Chuanbo,&Wang, Qiming.(2012).Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.Nanoscale Research Letters,7,1-11.
MLA Liu, Zhi,et al."Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature".Nanoscale Research Letters 7(2012):1-11.
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