Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature | |
Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming | |
2012 | |
Source Publication | Nanoscale Research Letters
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Volume | 7Pages:1-11 |
Subject Area | 光电子学 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-05-07 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/24033 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Liu, Zhi,Cheng, Buwen,Hu, Weixuan,et al. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature[J]. Nanoscale Research Letters,2012,7:1-11. |
APA | Liu, Zhi,Cheng, Buwen,Hu, Weixuan,Su, Shaojian,Li, Chuanbo,&Wang, Qiming.(2012).Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.Nanoscale Research Letters,7,1-11. |
MLA | Liu, Zhi,et al."Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature".Nanoscale Research Letters 7(2012):1-11. |
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