| Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature | |
| Liu, Zhi; Cheng, Buwen; Hu, Weixuan; Su, Shaojian; Li, Chuanbo; Wang, Qiming | |
| 2012 | |
| Source Publication | Nanoscale Research Letters
 |
| Volume | 7Pages:1-11 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-05-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24033 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Liu, Zhi,Cheng, Buwen,Hu, Weixuan,et al. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature[J]. Nanoscale Research Letters,2012,7:1-11. |
| APA | Liu, Zhi,Cheng, Buwen,Hu, Weixuan,Su, Shaojian,Li, Chuanbo,&Wang, Qiming.(2012).Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.Nanoscale Research Letters,7,1-11. |
| MLA | Liu, Zhi,et al."Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature".Nanoscale Research Letters 7(2012):1-11. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012328.pdf（305KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment