SEMI OpenIR  > 中科院半导体材料科学重点实验室
Simulation of proton transportation process in GaN
Zhang, Ming-Lan; Zhang, Xiao-Qian; Yang, Rui-Xia; Di, Zhao-Ting
2012
Source PublicationYuanzineng Kexue Jishu/Atomic Energy Science and Technology
Volume46Issue:6Pages:648-651
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24031
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, Ming-Lan,Zhang, Xiao-Qian,Yang, Rui-Xia,et al. Simulation of proton transportation process in GaN[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,2012,46(6):648-651.
APA Zhang, Ming-Lan,Zhang, Xiao-Qian,Yang, Rui-Xia,&Di, Zhao-Ting.(2012).Simulation of proton transportation process in GaN.Yuanzineng Kexue Jishu/Atomic Energy Science and Technology,46(6),648-651.
MLA Zhang, Ming-Lan,et al."Simulation of proton transportation process in GaN".Yuanzineng Kexue Jishu/Atomic Energy Science and Technology 46.6(2012):648-651.
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