| Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs | |
| Wang, Lanxiang; Han, Genquan; Su, Shaojian; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Liu, Bin; Kong, Eugene Yu-Jing; Xue, Chunlai; Wang, Qiming; Cheng, Buwen; Yeo, Yee-Chia | |
| 2012 | |
| Source Publication | Electrochemical and Solid-State Letters
 |
| Volume | 15Issue:6Pages:H179-H181 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-05-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/24017 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Wang, Lanxiang,Han, Genquan,Su, Shaojian,et al. Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs[J]. Electrochemical and Solid-State Letters,2012,15(6):H179-H181. |
| APA | Wang, Lanxiang.,Han, Genquan.,Su, Shaojian.,Zhou, Qian.,Yang, Yue.,...&Yeo, Yee-Chia.(2012).Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs.Electrochemical and Solid-State Letters,15(6),H179-H181. |
| MLA | Wang, Lanxiang,et al."Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs".Electrochemical and Solid-State Letters 15.6(2012):H179-H181. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012289.pdf（238KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment