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Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer
Lu, Na; Liu, Zhiqiang; Guo, Enqing; Wang, Liancheng; Melton, Andrew; Ferguson, Ian
2012
Source PublicationMaterials Research Society Symposium Proceedings
Volume1396Pages:15-19
Subject Area半导体器件
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24012
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Lu, Na,Liu, Zhiqiang,Guo, Enqing,et al. Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer[J]. Materials Research Society Symposium Proceedings,2012,1396:15-19.
APA Lu, Na,Liu, Zhiqiang,Guo, Enqing,Wang, Liancheng,Melton, Andrew,&Ferguson, Ian.(2012).Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer.Materials Research Society Symposium Proceedings,1396,15-19.
MLA Lu, Na,et al."Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer".Materials Research Society Symposium Proceedings 1396(2012):15-19.
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