SEMI OpenIR  > 中科院半导体材料科学重点实验室
Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors
Ji, Dong; Lu, Yanwu; Liu, Bing; Jin, Guangri; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
2012
Source PublicationJournal of Applied Physics
Volume112Pages:024515
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24006
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ji, Dong,Lu, Yanwu,Liu, Bing,et al. Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors[J]. Journal of Applied Physics,2012,112:024515.
APA Ji, Dong.,Lu, Yanwu.,Liu, Bing.,Jin, Guangri.,Liu, Guipeng.,...&Wang, Zhanguo.(2012).Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors.Journal of Applied Physics,112,024515.
MLA Ji, Dong,et al."Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors".Journal of Applied Physics 112(2012):024515.
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