SEMI OpenIR  > 中科院半导体材料科学重点实验室
Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
Zhang, Hongyi; Chen, Yonghai; Zhou, Guanyu; Tang, Chenguang; Wang, Zhanguo
2012
Source PublicationNanoscale Research Letters
Volume7
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24002
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, Hongyi,Chen, Yonghai,Zhou, Guanyu,et al. Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots[J]. Nanoscale Research Letters,2012,7.
APA Zhang, Hongyi,Chen, Yonghai,Zhou, Guanyu,Tang, Chenguang,&Wang, Zhanguo.(2012).Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots.Nanoscale Research Letters,7.
MLA Zhang, Hongyi,et al."Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots".Nanoscale Research Letters 7(2012).
Files in This Item:
File Name/Size DocType Version Access License
2012265.pdf(5947KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhang, Hongyi]'s Articles
[Chen, Yonghai]'s Articles
[Zhou, Guanyu]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhang, Hongyi]'s Articles
[Chen, Yonghai]'s Articles
[Zhou, Guanyu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhang, Hongyi]'s Articles
[Chen, Yonghai]'s Articles
[Zhou, Guanyu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.