SEMI OpenIR  > 中科院半导体材料科学重点实验室
The influence of pressure on the growth of InAlN/AlN/GaN heterostructure
Bi, Y; Wang, X.L; Wang, C.M; Li, J.P; Liu, H.X; Chen, H; Xiao, H.L; Feng, C; Jiang, L.J
2012
Source PublicationEPJ Applied Physics
Volume57Issue:3Pages:30103
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23996
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Bi, Y,Wang, X.L,Wang, C.M,et al. The influence of pressure on the growth of InAlN/AlN/GaN heterostructure[J]. EPJ Applied Physics,2012,57(3):30103.
APA Bi, Y.,Wang, X.L.,Wang, C.M.,Li, J.P.,Liu, H.X.,...&Jiang, L.J.(2012).The influence of pressure on the growth of InAlN/AlN/GaN heterostructure.EPJ Applied Physics,57(3),30103.
MLA Bi, Y,et al."The influence of pressure on the growth of InAlN/AlN/GaN heterostructure".EPJ Applied Physics 57.3(2012):30103.
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