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Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming
2012
Source PublicationInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
Pages6210151
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23993
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Wang, Lanxiang,Han, Genquan,Su, Shaojian,et al. Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor[J]. International Symposium on VLSI Technology, Systems, and Applications, Proceedings,2012:6210151.
APA Wang, Lanxiang.,Han, Genquan.,Su, Shaojian.,Cheng, Buwen.,Yeo, Yee-Chia.,...&Wang, Qiming.(2012).Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor.International Symposium on VLSI Technology, Systems, and Applications, Proceedings,6210151.
MLA Wang, Lanxiang,et al."Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor".International Symposium on VLSI Technology, Systems, and Applications, Proceedings (2012):6210151.
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