Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor | |
Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming | |
2012 | |
Source Publication | International Symposium on VLSI Technology, Systems, and Applications, Proceedings
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Pages | 6210151 |
Subject Area | 光电子学 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-05-07 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23993 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Wang, Lanxiang,Han, Genquan,Su, Shaojian,et al. Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor[J]. International Symposium on VLSI Technology, Systems, and Applications, Proceedings,2012:6210151. |
APA | Wang, Lanxiang.,Han, Genquan.,Su, Shaojian.,Cheng, Buwen.,Yeo, Yee-Chia.,...&Wang, Qiming.(2012).Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor.International Symposium on VLSI Technology, Systems, and Applications, Proceedings,6210151. |
MLA | Wang, Lanxiang,et al."Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor".International Symposium on VLSI Technology, Systems, and Applications, Proceedings (2012):6210151. |
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