| Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor | |
| Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming | |
| 2012 | |
| Source Publication | International Symposium on VLSI Technology, Systems, and Applications, Proceedings
 |
| Pages | 6210151 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-05-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23993 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Wang, Lanxiang,Han, Genquan,Su, Shaojian,et al. Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor[J]. International Symposium on VLSI Technology, Systems, and Applications, Proceedings,2012:6210151. |
| APA | Wang, Lanxiang.,Han, Genquan.,Su, Shaojian.,Cheng, Buwen.,Yeo, Yee-Chia.,...&Wang, Qiming.(2012).Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor.International Symposium on VLSI Technology, Systems, and Applications, Proceedings,6210151. |
| MLA | Wang, Lanxiang,et al."Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor".International Symposium on VLSI Technology, Systems, and Applications, Proceedings (2012):6210151. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012247.pdf（1155KB） | 限制开放 | License | Application Full Text | |||
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