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Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer
Li, Panpan; Li, Hongjian; Zhang, Yiyun; Li, Zhicong; Liang, Meng; Li, Jing; Wang, Guohong
2012
Source PublicationJournal of Semiconductors
Volume33Issue:10Pages:104002
Subject Area半导体器件
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23990
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Li, Panpan,Li, Hongjian,Zhang, Yiyun,et al. Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer[J]. Journal of Semiconductors,2012,33(10):104002.
APA Li, Panpan.,Li, Hongjian.,Zhang, Yiyun.,Li, Zhicong.,Liang, Meng.,...&Wang, Guohong.(2012).Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer.Journal of Semiconductors,33(10),104002.
MLA Li, Panpan,et al."Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer".Journal of Semiconductors 33.10(2012):104002.
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