| Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire | |
| Zhao, D.G; Jiang, D.S; Wu, L.L; Le, L.C; Li, L; Chen, P; Liu, Z.S; Zhu, J.J; Wang, H; Zhang, S.M; Yang, H | |
| 2012 | |
| Source Publication | Journal of Alloys and Compounds
 |
| Volume | 544Pages:94-98 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-05-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23989 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Zhao, D.G,Jiang, D.S,Wu, L.L,et al. Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire[J]. Journal of Alloys and Compounds,2012,544:94-98. |
| APA | Zhao, D.G.,Jiang, D.S.,Wu, L.L.,Le, L.C.,Li, L.,...&Yang, H.(2012).Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire.Journal of Alloys and Compounds,544,94-98. |
| MLA | Zhao, D.G,et al."Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire".Journal of Alloys and Compounds 544(2012):94-98. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012228.pdf（962KB） | 限制开放 | License | Application Full Text | |||
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