SEMI OpenIR  > 中科院半导体材料科学重点实验室
Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method
Liu, Jian-Qing; Chen, Yong-Hai; Xu, Bo; Wang, Zhan-Gzuo
2012
Source PublicationAdvanced Materials Research
Volume341-342Pages:138-141
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23988
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liu, Jian-Qing,Chen, Yong-Hai,Xu, Bo,et al. Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method[J]. Advanced Materials Research,2012,341-342:138-141.
APA Liu, Jian-Qing,Chen, Yong-Hai,Xu, Bo,&Wang, Zhan-Gzuo.(2012).Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method.Advanced Materials Research,341-342,138-141.
MLA Liu, Jian-Qing,et al."Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method".Advanced Materials Research 341-342(2012):138-141.
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