SEMI OpenIR  > 中科院半导体材料科学重点实验室
Microstructure and electrical properties of ZnO-Bi2O 3-based varistor ceramics by different high-energy ball milling time
Zhang, Chenghua; Li, Mingshuang; Xu, Dong; Chen, Yongfang; Liu, Yuanling; Zhang, Ke
2012
Source PublicationAdvanced Materials Research
Pages490-495
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23984
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, Chenghua,Li, Mingshuang,Xu, Dong,et al. Microstructure and electrical properties of ZnO-Bi2O 3-based varistor ceramics by different high-energy ball milling time[J]. Advanced Materials Research,2012:490-495.
APA Zhang, Chenghua,Li, Mingshuang,Xu, Dong,Chen, Yongfang,Liu, Yuanling,&Zhang, Ke.(2012).Microstructure and electrical properties of ZnO-Bi2O 3-based varistor ceramics by different high-energy ball milling time.Advanced Materials Research,490-495.
MLA Zhang, Chenghua,et al."Microstructure and electrical properties of ZnO-Bi2O 3-based varistor ceramics by different high-energy ball milling time".Advanced Materials Research (2012):490-495.
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