SEMI OpenIR  > 中科院半导体材料科学重点实验室
Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates
Li, Yanbo; Zhang, Yang; Zhang, Yuwei; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping
2012
Source PublicationApplied Surface Science
Volume258Issue:17Pages:6571-6575
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23982
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, Yanbo,Zhang, Yang,Zhang, Yuwei,et al. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates[J]. Applied Surface Science,2012,258(17):6571-6575.
APA Li, Yanbo,Zhang, Yang,Zhang, Yuwei,Wang, Baoqiang,Zhu, Zhanping,&Zeng, Yiping.(2012).Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates.Applied Surface Science,258(17),6571-6575.
MLA Li, Yanbo,et al."Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates".Applied Surface Science 258.17(2012):6571-6575.
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