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Low threading dislocation density in GaN films grown on patterned sapphire substrates
Liang, Meng; Wang, Guohong; Li, Hongjian; Li, Zhicong; Yao, Ran; Wang, Bing; Li, Panpan; Li, Jing; Yi, Xiaoyan; Wang, Junxi; Li, Jinmin
2012
Source PublicationJournal of Semiconductors
Volume33Issue:11Pages:113002
Subject Area半导体器件
Indexed ByEI
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23977
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Liang, Meng,Wang, Guohong,Li, Hongjian,et al. Low threading dislocation density in GaN films grown on patterned sapphire substrates[J]. Journal of Semiconductors,2012,33(11):113002.
APA Liang, Meng.,Wang, Guohong.,Li, Hongjian.,Li, Zhicong.,Yao, Ran.,...&Li, Jinmin.(2012).Low threading dislocation density in GaN films grown on patterned sapphire substrates.Journal of Semiconductors,33(11),113002.
MLA Liang, Meng,et al."Low threading dislocation density in GaN films grown on patterned sapphire substrates".Journal of Semiconductors 33.11(2012):113002.
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